Professor Fujio Masuoka, Chief Technology Officer (CTO), Unisantis®
Professor Masuoka is a world renowned technologist credited as the inventor of flash memory. He received a doctorate in engineering from Tohoku University in Japan and is currently Professor Emeritus of the Research Institute of Electrical Communication at Tohoku University. He spent 23 years at Toshiba Corporation, a Japanese electronics and engineering firm, where he worked in various research and engineering roles.
He is a Fellow of the Institute of Electrical and Electronics Engineers (IEEE) and a member of the Institution of Electronics, Information and Communication Engineers, Japan.
Whilst working at Toshiba, Professor Masuoka led the development team that invented flash memory and he first presented his ideas for Surrounding Gate Transistor semiconductor technology in 1988 at the annual International Electron Devices Meeting (IEDM). He has spent most of his career working on the research and development of semiconductor memory including flash memory, programmable read-only memory and random access memory. He is also an expert on image sensing devices (such as charge-coupled devices) and high-speed semiconductor logic. Professor Masuoka filed the original patents of both NOR and NAND flash memories, and published the first papers on the technologies at the 1984 and 1987 IEDMs respectively.
He accepted the position of CTO of Unisantis® in 2004 and has been working on the development of SGT Technology® ever since.
- 1966 – Graduated from the Faculty of Engineering, Tohoku University.
- 1971 – Completed a doctoral course, Tohoku University.
- 1971 – Joined Toshiba Corporation.
- 1994 – Appointed as a Professor at Tohoku University.
- 2005 – Joined Unisantis® Electronics as Chief Technology Officer.
- 2007 – Appointed as Honorary Professor at Tohoku University.
Awards and Recognition for Professor Masuoka:
- 1977 – Awarded the Watanabe’s Prize, The Mining and Materials Processing Institute of Japan.
- 1980 – Awarded the invention award, National Invention Awards, Japan.
- 1985 – Awarded the encouraging award for invention, Japan Institute of Invention and Innovation.
- 1986 – Awarded the encouraging award for invention, Japan Institute of Invention and Innovation
- 1988 – Awarded the encouraging awards, twice in the year, for invention, Japan Institute of Invention and Innovation.
- 1991 – Awarded the encouraging award for invention, Japan Institute of Invention and Innovation.
- 1995 – Became an IEEE Fellow.
- 1997 – Awarded the IEEE Morris N. Liebmann Memorial Award.
- 2000 – Awarded the Ichimura-Sangyo Prize, New Technology Development Foundation, Japan.
- 2002 – Awarded the 2002 Solid State Devices and Materials Award.
- 2005 – Awarded The Economist’s Innovation Award.
- 2007 – Awarded Medal with Purple Ribbon from Emperor Akihito of Japan.
- 2009 – Flash memory recognized in the IEEE as one of `25 Microchips That Shook The World`.
- 2010 – Inducted into the Computer History Museum Hall of Fame.
- 2011 – Inducted into the CE Hall of Fame.
Timeline of major inventions:
- 1971 – Invents SAMOS (USP).
- 1976 – Invents double PolySi DRAM.
- 1980 – Patents Flash memory.
- 1984 – Publishes NOR flash memory paper at IEDM.
- 1987 – Patents NAND flash memory and publishes paper at IEDM.
- 1988 – First presents idea for Surrounding Gate Transistor at IEDM.